Description
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Features
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- Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. F
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REF. A B C D E F G
Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N
Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.
SSG4825P Datasheet
