Description
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Features
- Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Low Thermal Impedance Copper Leadframe SOIC-8 Saves Board Space Fast Switching Speed High Performance Trench Technology
A C N J H G
Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K
F
REF. H J K L M N
E
REF. A B C D E F G.
SSG4842N Datasheet
