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SSG4N10E - Dual-N Enhancement Mode Power MOSFET

Description

The SSG4N10E provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.

Features

  • Low on-resistance Simple Drive Requirement Double-N MosFET Package SOP-8 LD M AC N JK HG B FE.

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Datasheet Details

Part number SSG4N10E
Manufacturer SeCoS
File Size 556.92 KB
Description Dual-N Enhancement Mode Power MOSFET
Datasheet download datasheet SSG4N10E Datasheet
Additional preview pages of the SSG4N10E datasheet.

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Full PDF Text Transcription

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Elektronische Bauelemente SSG4N10E 4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4N10E provide the designer with the best Combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. FEATURES Low on-resistance Simple Drive Requirement Double-N MosFET Package SOP-8 LD M AC N JK HG B FE MARKING CODE 4N10ESS = Date Code PACKAGE INFORMATION Package MPQ SOP-8 3K Leader Size 13’ inch Dimensions in millimeters REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF.
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