SSG4N10E Overview
The SSG4N10E provide the designer with the best bination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
SSG4N10E datasheet by SeCoS Halbleitertechnologie GmbH.
| Part number | SSG4N10E |
|---|---|
| Datasheet | SSG4N10E-SeCoS.pdf |
| File Size | 556.92 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | Dual-N Enhancement Mode Power MOSFET |
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The SSG4N10E provide the designer with the best bination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
View all SeCoS Halbleitertechnologie GmbH datasheets
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