SSG4N10E
SSG4N10E is Dual-N Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
Elektronische Bauelemente
4A, 100V, RDS(ON) 120mΩ Dual-N Enhancement Mode Power MOSFET
RoHS pliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4N10E provide the designer with the best bination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
Features
Low on-resistance Simple Drive Requirement Double-N MosFET Package
SOP-8
LD M
HG B
MARKING CODE
4N10ESS
= Date Code
PACKAGE INFORMATION
Package
SOP-8
3K
Leader Size 13’ inch
Dimensions in millimeters
REF.
A B C D E F G
Millimeter Min. Max.
5.80 6.20 4.80 5.00 3.80 4.00
0° 8° 0.40 0.90 0.19 0.25
1.27 TYP.
REF.
H J K L M...
