SSG6679 - P-Channel Enhancement Mode Power Mos.FET

SeCoS

Datasheet Details

Part number	SSG6679
Manufacturer	SeCoS
File Size	477.29 KB
Description	P-Channel Enhancement Mode Power Mos.FET
Datasheet	SSG6679-SeCoS.pdf

The SSG6679 provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Lower On-Resistance.
Simple Drive Requirement.
Fast Switching Characteristics D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D Date Code 6679SC G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 oC ID@TA=70 C IDM PD@TA=25 C o o Ratings -30 ±25 -14 -8.9 -50 2.5 0.02 Unit V V A A A W W / oC o Total Power Dissipat.

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Published: Sep 14, 2014 |