Download SSG6680 Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SSG6680
SSG6680 is N-Channel Enhancement Mode Power Mos.FET manufactured by SeCoS Halbleitertechnologie GmbH.
11.5A, 30V,RDS(ON) 11m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS pliant Product SOP-8 Description The SSG6680 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 is universally preferred for all mercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF 3.80 4.00 Features - Surface Mount Package - High Vgs Max. Rating Voltage - Low On-Resistance Date Code D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in...