SSG6612N Datasheet N-Ch Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

SSG6612N n-ch enhancement mode power mosfet by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	SSG6612N
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	570.19 KB
Description	N-Ch Enhancement Mode Power MOSFET
Download	SSG6612N Download (PDF)

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

SOP-8 B L D M

Overview

SSG6612N Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen &.

Key Features

Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J K H G F E.

More Datasheets from SeCoS Halbleitertechnologie GmbH

Part Number	Description
SSG6618	N-Channel Enhancement Mode Power Mos.FET
SSG6679	P-Channel Enhancement Mode Power Mos.FET
SSG6680	N-Channel Enhancement Mode Power Mos.FET
SSG0410	N-Channel MOSFET
SSG04N15B-C	N-Channel MOSFET
SSG05P03-C	P-Ch Enhancement Mode Power MOSFET
SSG07N04-C	N-CH Enhancement Mode Power MOSFET
SSG08N10-C	N-Ch Enhancement Mode Power MOSFET
SSG10N10	N-Channel Enhancement Mode Power MosFET
SSG12N03	N-Channel MOSFET