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SSG6612N

Manufacturer: SeCoS Halbleitertechnologie GmbH

SSG6612N datasheet by SeCoS Halbleitertechnologie GmbH.

SSG6612N datasheet preview

SSG6612N Datasheet Details

Part number SSG6612N
Datasheet SSG6612N-SeCoS.pdf
File Size 570.19 KB
Manufacturer SeCoS Halbleitertechnologie GmbH
Description N-Ch Enhancement Mode Power MOSFET
SSG6612N page 2 SSG6612N page 3

SSG6612N Overview

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones.

SSG6612N Key Features

  • Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves boar
  • 4.0 1.1 1.4 720 165 60 16 5 23 3
SeCoS Halbleitertechnologie GmbH logo - Manufacturer

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