Download SSG6679 Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SSG6679
SSG6679 is P-Channel Enhancement Mode Power Mos.FET manufactured by SeCoS Halbleitertechnologie GmbH.
-14A, -30V,RDS(ON) 9m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS pliant Product Description The SSG6679 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 is universally preferred for all mercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 SOP-8 0.40 0.90 6.20 5.80 0.25 0.19 0.25 45 o 0.375 REF 3.80 4.00 1.27 Typ. 4.80 5.00 0.10 0.25 Features - Lower On-Resistance - Simple Drive Requirement - Fast Switching Characteristics D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in...