SSG6679 - P-Channel Enhancement Mode Power Mos.FET

Product Overview

SeCoS

Part number	SSG6679
Manufacturer	SeCoS
File Size	477.29 KB
Description	P-Channel Enhancement Mode Power Mos.FET
Datasheet	SSG6679 Datasheet
Additional preview pages of the SSG6679 datasheet.

The SSG6679 provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Lower On-Resistance.
Simple Drive Requirement.
Fast Switching Characteristics D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D Date Code 6679SC G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 oC ID@TA=70 C IDM PD@TA=25 C o o Ratings -30 ±25 -14 -8.9 -50 2.5 0.02 Unit V V A A A W W / oC o Total Power Dissipat.

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Published: Sep 14, 2014 |