SSG6618 - N-Channel Enhancement Mode Power Mos.FET

Product Overview

SeCoS

Part number	SSG6618
Manufacturer	SeCoS
File Size	375.21 KB
Description	N-Channel Enhancement Mode Power Mos.FET
Datasheet	SSG6618 Datasheet
Additional preview pages of the SSG6618 datasheet.

The SSG6618 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Fast Switching Characteristic.
Simple Drive Requirement.
Low Gate Charge Date Code D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D 6618SC G 1 S1 2 G1 3 S2 4 G2 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ±20 7 5.8 30 2.5 0.02 Unit V V A A A W W/ C o o Total Power Dissip.

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Published: Sep 14, 2014 |