SSG6618
SSG6618 is N-Channel Enhancement Mode Power Mos.FET manufactured by SeCoS Halbleitertechnologie GmbH.
7A, 30V,RDS(ON) 30m£[ Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS pliant Product
SOP-8
Description
The SSG6618 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 is universally preferred for all mercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 6.20 5.80 0.25 0.40 0.90 0.19 0.25
45 o
0.375 REF
3.80 4.00
Features
- Fast Switching Characteristic
- Simple Drive Requirement
- Low Gate Charge
Date Code D1 8 D1 7 D2 6 D2 5
0 o 8 o
1.35 1.75
Dimensions in...
