SSG6680 - N-Channel Enhancement Mode Power Mos.FET

SeCoS

Datasheet Details

Part number	SSG6680
Manufacturer	SeCoS
File Size	406.28 KB
Description	N-Channel Enhancement Mode Power Mos.FET
Datasheet	SSG6680-SeCoS.pdf

The SSG6680 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Surface Mount Package.
High Vgs Max. Rating Voltage.
Low On-Resistance Date Code D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D 6680SC G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ±25 11.5 9.5 50 2.5 0.02 Unit V V A A A W W/ C o o Total Power Dissipation L.

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Published: Sep 14, 2014 |