SSG9922E Key Features
- Optimal DC/DC Battery Application
- Low On-Resistance
- Capable Of 2.5V Gate Drive
SSG9922E is N-channel MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
| Part Number | Description |
|---|---|
| SSG9926J-C | Dual N-Channel Enhancement Mode Power MOSFET |
| SSG9960 | N-channel MOSFET |
| SSG9962 | N-channel MOSFET |
| SSG9971 | N-channel MOSFET |
| SSG9971A | Dual-N Enhancement Mode Power MOSFET |
The SSG9922E provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF 3.80 4.00.