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SSG9960 Datasheet N-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SSG9960 7.8A, 40V,RDS(ON) 20m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.

General Description

0.40 0.90 0.19 0.25 The SSG9960 provide the designer with the best combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.

45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 0.35 0.49 1.27Typ.

4.80 5.00 0.100.25

Key Features

  • Low on-resistance.
  • Fast switching speed D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 D2 Date Code 9960SS G1 1 S1 2 G1 3 S2 4 G2 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 40 ±20 7.8 6.2 20 2 0.016 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Fac.

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SSG9960 Distributor