Datasheet Details
| Part number | SSG9960 |
|---|---|
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| File Size | 323.41 KB |
| Description | N-channel MOSFET |
| Datasheet |
 SSG9960 Datasheet
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General Description
The SSG9960 provide the designer with the best combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness.
1.27Typ.
Key Features
- Low on-resistance.
- Fast switching speed D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 D2 Date Code 9960SS G1 1 S1 2 G1 3 S2 4 G2 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 40 ±20 7.8 6.2 20 2 0.016 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Fac.