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SSG9971 - N-channel MOSFET

General Description

The SSG9971 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

1.27Typ.

Key Features

  • Simple drive requirement.
  • Low gate charge D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 D2 Date Code 9971SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1.2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 60 ±25 5.0 3.2 30 2.0 0.016 Unit V V A A A W W / oC o Total Power Di.

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SSG9971 Elektronische Bauelemente 5A, 60V,RDS(ON) 50m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description The SSG9971 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 6.20 5.80 0.25 3.80 4.00 0.40 0.90 0.19 0.25 45 o 0.375 REF 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 Features * Simple drive requirement * Low gate charge D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 D2 Date Code 9971SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1.