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SSG9975 - N-channel MOSFET

General Description

The SSG9975 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

1.27Typ.

Key Features

  • RoHS Compliant.
  • Lower On-Resistance.
  • High Breakdown Voltage Date Code 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 8 D1 7 D2 6 D2 5 D1 D2 9 975SS G1 1 S1 2 G1 3 S2 4 G2 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 60 ±25 7.6 6.1 30 2 0.016 Unit V V A A A W W/ C o.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSG9975 Elektronische Bauelemente 7.6A, 60V,RDS(ON) 21m£[ N-Channel Enhancement Mode Power Mos.FET SOP-8 Description 0.40 0.90 0.19 0.25 The SSG9975 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 0.35 0.49 1.27Typ. 4.80 5.00 0.10~0.25 Features * RoHS Compliant * Lower On-Resistance * High Breakdown Voltage Date Code 0 o 8 o 1.35 1.