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SSG9973 Datasheet N-channel MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: SSG9973 3.9A, 60V,RDS(ON) 80m£[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.

General Description

The SSG9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF 3.80 4.00 0.35 0.49 1.27Typ.

4.80 5.00 0.100.25

Key Features

  • Simple drive requirement.
  • Low gate charge D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions in millimeters D2 Date Code 9973SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1.2 3 3 Symbol VDS VGS ID@TA=25к ID@TA=70к IDM PD@TA=25к Ratings 60 ±20 3.9 2.5 20 2.0 0.016 Unit V V A A A W W /e C e C Total Power Dissipatio.

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