Datasheet4U Logo Datasheet4U.com

SSG9971A-C - Dual-N Enhancement Mode Power MOSFET

General Description

The SSG9971A is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The SSG9971A meet the RoHS and Green Product requirement with full function reliability approved.

Key Features

  • Advanced High Cell Density Trench Technology.
  • Super Low Gate Charge.
  • Green Device Available.
  • Manufactured in IATF 16949 Certified Facilities.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente SSG9971A-C 5A, 60V, RDS(ON) 36m Dual-N Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG9971A is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The SSG9971A meet the RoHS and Green Product requirement with full function reliability approved. SOP-8 FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available  Manufactured in IATF 16949 Certified Facilities MARKING CODE 9971ASS    = Date Code PACKAGE INFORMATION Package MPQ SOP-8 2.