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SST3215 Datasheet Preview

SST3215 Datasheet

N-Channel MOSFET

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Elektronische Bauelemente
SST3215
2.2A , 150V , RDS(ON) 315m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SST3215 provide the designer with the best combination
of fast switching, low on-resistance and cost-effectiveness.
The SOT-26 package is universally used for all commercial-
industrial surface mount applications.
FEATURES
Low on-resistance
Capable of 2.5V gate drive
Low drive current
MARKING
3215
= Date Code
SOT-26
A
E
L
B
F CH
DG K J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
1.30 MAX.
1.90 REF.
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0 0.10
0.60 REF.
0.12 REF.
0° 10°
0.95 REF.
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size
7 inch
DD
DD
GS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current, VGS=10V 1
TC=75°C
TA=25°C
ID
Pulsed Drain Current 2, 3
TA=75°C
IDM
Power Dissipation
TC =25°C
TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Thermal Resistance Junction to Ambient 1
Thermal Resistance Junction to Case 1
t5sec
Steady State
RΘJA
RΘJC
http://www.SeCoSGmbH.com/
25-Aug-2015 Rev. A
Ratings
150
±20
2.2
1.8
1.7
1.4
8
3.2
2
-55~150
Unit
V
V
A
A
W
°C
62.5
125
39
°C / W
Any changes of specification will not be informed individually.
Page 1 of 5




SeCoS

SST3215 Datasheet Preview

SST3215 Datasheet

N-Channel MOSFET

No Preview Available !

Elektronische Bauelemente
SST3215
2.2A , 150V , RDS(ON) 315m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS 150 - - V VGS=0, ID=250µA
VGS(th) 2 - 4 V VDS=VGS, ID=250µA
Gate-Body Leakage Current
IGSS
-
-
±100
nA VGS=±20V
Drain-Source Leakage
Current
TJ=25°C
TJ=55°C
IDSS
- -1
µA VDS=120V, VGS=0
- - 10
Drain-Source On-Resistance 2
RDS(ON)
240 315
VGS=10V, ID=1.5A
- m
265 345
VGS=6V, ID=1.5A
Forward Transconductance
Total Gate Charge 2
Gate-Source Charge
Gate-Drain (“Miller”)Charge
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
gfs
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
- 2.5
Dynamic
-
S VDS=15V, ID=1A
- 7.5 -
VDS=75V,
- 1.5 - nC VGS=10V,
-2-
ID=1.7A
- 12 -
VDS=75V,
- 16 - nS VGS=10V,
- 32 -
RG=6,
- 17 -
ID=1A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss - 290 -
Coss
- 30 -
Crss - 12 -
Source-Drain Diode
VGS=0V
pF VDS=30V,
f=1.0MHz
Diode Forward Voltage 2
Continuous Source Current 1, 2
Pulsed Source Current 2, 3
VSD - - 1.2 V IS=1.7A, VGS=0V
IS - - 1.7
A VG=VD=0V, Force Current
ISM - - 5
Reverse Recovery Time
Reverse Recovery Charge
TRR
- 44.5 -
nS
IF=1.7A, dl/dt=100A/µs, TJ=25°C
QRR
- 15.8 -
nC
Notes:
1. Surface mounted on 1 inch2 copper pad of FR4 board; 156°C/W when mounted on M in. copper pad.
2. The data tested by pulsed, pulse width300µs, duty cycle 2%
3. The power dissipation is limited by 150°C junct ion temperature.
http://www.SeCoSGmbH.com/
25-Aug-2015 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 5


Part Number SST3215
Description N-Channel MOSFET
Maker SeCoS
Total Page 5 Pages
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