Datasheet4U Logo Datasheet4U.com

SST6301K - N-Channel Enhancement Mode Power MosFET

Description

0.37Ref.

0.20 0.60 Ref.

The SST6301K utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

Features

  • RoHS Compliant.
  • Simple Drive Requirement.
  • Small Package Outline G1 D1 D2 G2 Dimensions in millimeters D1 6 S1 5 D2 4 Date Code 301E S1 S2 1 G1 2 S2 3 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM P.

📥 Download Datasheet

Datasheet preview – SST6301K

Datasheet Details

Part number SST6301K
Manufacturer SeCoS
File Size 411.95 KB
Description N-Channel Enhancement Mode Power MosFET
Datasheet download datasheet SST6301K Datasheet
Additional preview pages of the SST6301K datasheet.

📁 Similar Datasheet

  • SST60R280SFD - 600V N-Channel Super-Junction MOSFET (Super Semiconductor)
  • SST65P542R - Remote Controller MCU (Silicon Storage Technology)
  • SST65R190S3 - 650V N-Channel Super-Junction MOSFET (Super Semiconductor)
  • SST6838 - NPN General Purpose Transistor (Rohm)
  • SST6839 - PNP General Purpose Transistor (Rohm)
  • SST6908 - N-Channel JFET (Siliconix)
  • SST6909 - N-Channel JFET (Siliconix)
  • SST6910 - N-Channel JFET (Siliconix)
  • SST108 - N-Channel JFET Switch (Calogic)
  • SST108 - Switching (Micross)
Other Datasheets by SeCoS
  • SST6601 - N And P-Channel Enhancement Mode Power MOSFET
  • SST6601-C - N And P-Channel Enhancement Mode Power MOSFET
  • SST1N20-C - N-Ch Enhancement Mode Power MOSFET
  • SST2007-C - P-Channel Enhancement Mode Power MOSFET
  • SST2019L-C - Dual N-Ch Enhancement Mode Power MOSFET
  • SST2602 - N-Channel Enhancement Mode Power MosFET
  • SST2603 - P-Channel MOSFET
  • SST2604 - N-Channel Enhancement Mode Power MosFET

Full PDF Text Transcription

Click to expand full text
SST6301K Elektronische Bauelemente 640mA, 30V,RDS(ON) 1.0£[ N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.37Ref. 0.20 0.60 Ref. 2.60 3.00 The SST6301K utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SST6301K is universally used for all commercial-industrial applications. 0.30 0.55 0.95 Ref. 2.70 3.10 0~0.1 0.25 1.40 1.80 0 o 10 o 1.20Ref.
Published: |