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BUL47A Datasheet - Seme LAB

BUL47A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR

BUL47A MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) www.DataSheet4U.com SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING.

BUL47A Features

* Multi

* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.

* Triple Gu

BUL47A Datasheet (46.77 KB)

BUL47A Datasheet Preview — Preview of BUL47A PDF

Datasheet Details

Part number:

BUL47A

Manufacturer:

Seme LAB

File Size:

46.77 KB

Description:

Advanced distributed base design high voltage high speed npn silicon power transistor.

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BUL47A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Seme LAB

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