* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* SIMPLE BIAS CIRCUITS
* LOW NOISE
* HIGH GAIN
* 13 dB MINIMUM APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1GHz ABSOLUTE MAXIMUM RATINGS (T
D1011UK
Seme LAB
132.58 KB
Metal gate rf silicon fet.
TetraFET D1011UK MECHANICAL DATA A 8 D 7 6 5 1 2 CB 3 4 H METAL GATE RF SILICON FET N GOLD METALLISED MULTI-PURPOSE SILICON P DMOS RF FE.
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