metal gate rf silicon fet.
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS
* VERY LOW Crss
* USEFUL PO AT 1GHz
* LOW NOISE
* HIGH GAIN
–.
* VERY LOW Crss
* USEFUL PO AT 1GHz
* LOW NOISE
* HIGH GAIN
– 13 dB MINIMUM
APPLICATIONS.
Image gallery
TAGS