D2017UK fet equivalent, metal gate rf silicon fet.
D ( 2 p ls )
E
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND
APPLICATIONS
F
G H
* LOW Crss
* SIMPLE BIAS CIRCUITS
DRAIN
DP
PIN 1 PIN 3 .
F
G H
* LOW Crss
* SIMPLE BIAS CIRCUITS
DRAIN
DP
PIN 1 PIN 3 SOURCE GATE PIN 2
* LOW NOISE
* HIGH GA.
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