* D ( 2 p ls ) E
* SIMPLIFIED AMPLIFIER DESIGN
* SUITABLE FOR BROAD BAND APPLICATIONS F G H
* LOW Crss
* SIMPLE BIAS CIRCUITS DRAIN DP PIN 1 PIN 3 SOURCE GATE PIN 2
* LOW NOISE
* HIGH GAIN
* 13 dB MINIMUM mm 16.51 6.35 45° 1.52 6.35 0.1
D2017UK
Seme LAB
39.58 KB
Metal gate rf silicon fet.
TetraFET D2017UK METAL GATE RF SILICON FET MECHANICAL DATA C A ! B GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1.
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