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HCS60R180S - N-Channel Super Junction MOSFET

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 46 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested April 2015 BVDSS = 600 V RDS(on) typ = 0.15 ȍ ID = 21 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VG.

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Datasheet Details

Part number HCS60R180S
Manufacturer SemiHow
File Size 162.49 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet HCS60R180S Datasheet

Full PDF Text Transcription for HCS60R180S (Reference)

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HCS60R180S HCS60R180S 600V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very ...

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ior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 46 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested April 2015 BVDSS = 600 V RDS(on) typ = 0.15 ȍ ID = 21 A TO-220F 12 3 1.Gate 2. Drain 3.