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HCS60R350T Datasheet Preview

HCS60R350T Datasheet

600V N-Channel Super Junction MOSFET

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Jan 2016
HCS60R350T
600V N-Channel Super Junction MOSFET
Features
‰ Very Low FOM (RDS(on) X Qg)
‰ Extremely low switching loss
‰ Excellent stability and uniformity
‰ 100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), max
Qg, Typ
Value
650
11
0.35
17.5
Unit
V
A
ȍ
nC
Application
‰ Switch Mode Power Supply (SMPS)
‰ Uninterruptible Power Supply (UPS)
‰ Power Factor Correction (PFC)
‰ TV power & LED Lighting Power
Package & Internal Circuit
TO-220F
G
D
S
Absolute Maximum Ratings TJ=25unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
600
ρ30
11 *
7*
33 *
300
31
-55 to +150
300
* Drain current limited by maximum junction temperature
Units
V
V
A
A
A
mJ
W
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
4.0
62.5
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟ͑ͣͧ͑͢͡




SemiHow

HCS60R350T Datasheet Preview

HCS60R350T Datasheet

600V N-Channel Super Junction MOSFET

No Preview Available !

Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 3.8 A
2.5
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 600 V, VGS = 0 V
VDS = 480 V, TJ = 125
VGS = ρ30 V, VDS = 0 V
600
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 11 A,
RG = 25 Ÿ
VDS = 480 V, ID = 11 A
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 11 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 11 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
--
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=4.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
-- 4.5
0.3 0.35
-- --
-- 10
-- 100
-- ρ100
900 1170
60 78
7 9.5
30 70
17 44
70 150
17 44
17.5 23
5.0 --
5.5 --
-- 11
-- 33
-- 1.4
280 --
2.8 --
V
Ÿ
V
nC
nC
nC
A
V
ȝ&
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͻΒΟ͑ͣͧ͑͢͡


Part Number HCS60R350T
Description 600V N-Channel Super Junction MOSFET
Maker SemiHow
Total Page 7 Pages
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