Datasheet4U Logo Datasheet4U.com

HCS60R750V - N-Channel Super Junction MOSFET

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 14 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ ȍ ID = 7 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

📥 Download Datasheet

Datasheet Details

Part number HCS60R750V
Manufacturer SemiHow
File Size 268.92 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet HCS60R750V Datasheet

Full PDF Text Transcription for HCS60R750V (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HCS60R750V. For precise diagrams, and layout, please refer to the original PDF.

HCS60R750V HCS60R750V 600V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very ...

View more extracted text
ior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 14 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ ȍ ID = 7 A TO-220F 12 3 1.Gate 2. Drain 3.