HFA9N90 - 900V N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested RDS(on) typ ȍ ID = 9.0 A TO-247 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drai.

HFA9N90 900v n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFA9N90
Manufacturer	SemiHow
File Size	194.77 KB
Description	900V N-Channel MOSFET
Datasheet	HFA9N90 Datasheet

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Full PDF Text Transcription (Reference)

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HFA9N90 July 2013 BVDSS = 900 V HFA9N90 900V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 55 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested RDS(on) typ ȍ ID = 9.0 A TO-247 1 2 3 1.Gate 2. Drain 3.