HFC1N80 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFC1N80 Jan 2007 HFC1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ ȍ ID = 0.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-126 1 23 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Cur.