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HFD2N60S Datasheet Preview

HFD2N60S Datasheet

600V N-Channel MOSFET

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HFD2N60S pdf
March 2014
HFD2N60S / HFU2N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 1.9 A
FEATURES
ƒ Originative New Design
ƒ Superior Avalanche Rugged Technology
ƒ Robust Gate Oxide Technology
ƒ Very Low Intrinsic Capacitances
ƒ Excellent Switching Characteristics
ƒ Unrivalled Gate Charge : 6.0 nC (Typ.)
ƒ Extended Safe Operating Area
ƒ Lower RDS(ON) ȍ 7\S #9GS=10V
ƒ 100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD2N60S
1
2
3
HFU2N60S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
1.9
1.14
7.6
ρ30
120
1.9
4.4
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25) *
Power Dissipation (TC = 25͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑- Derate above 25ഒ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
44
0.35
-55 to +150
300
Units
9
$
$
$
9
P-
$
P-
9QV
:
:
:ഒ
ഒ
ഒ
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
2.87
50
110
Units
ഒ:
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑͑ͣͥ͑͢͡



SemiHow
SemiHow

HFD2N60S Datasheet Preview

HFD2N60S Datasheet

600V N-Channel MOSFET

No Preview Available !

HFD2N60S pdf
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 ᒺ
VGS = 10 V, ID = 0.95 A͑
2.0
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250ᒺ
ID = 250 ᒺ5HIHUHQFHGWRഒ
VDS = 600 V, VGS = 0 V͑
VDS = 480 V, TC = 125ఁ͑
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 2.0 A,
RG = 25 ש͑
͑
 1RWH 
VDS = 480V, ID = 2.0 A,
VGS = 10 V
 1RWH 
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 1.9 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 2.0 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
4.2 5.0
9
വ
-- -- 9
0.6 -- 9ഒ
-- 1 ᒺ
-- 10 ᒺ
-- 100 ᒹ
-- -100 ᒹ
280 365
37 48
6.0 8.0
ᓂ
ᓂ
ᓂ
9 28 ᓩ
25 60 ᓩ
24 58 ᓩ
28 66 ᓩ
6.0 8.0 Q&
1.3 -- Q&
2.6 -- Q&
-- 1.9
-- 7.6
-- 1.4
230 --
1.0 --
$
9
ᓩ
˩&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=56mH, IAS=2.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝;ΒΣΔΙ͑͑ͣͥ͑͢͡


Part Number HFD2N60S
Description 600V N-Channel MOSFET
Maker SemiHow
Total Page 8 Pages
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