HFI640 Datasheet 200V N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFW640 / HFI640 Mar 2008 HFW640 / HFI640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 37 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.145 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK 2 1 3 HFW640 1 2 3 HFI640 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dra.