HFP13N60U
HFP13N60U is N-Channel MOSFET manufactured by SemiHow.
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 n C (Typ.) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.) @VGS=10V 100% Avalanche Tested
Sep 2012
BVDSS = 600 V RDS(on) typ = 0.33 ȍ ID = 14.0 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
- Continuous (TC = 25)
- Continuous (TC = 100)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600 14.0 8.8 56.0 ρ30 810 14.0 23.0 4.5
Power Dissipation (TC = 25)
- Derate above 25
230 1.84
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Thermal Resistance Characteristics
Symbol RșJC RșCS RșJA
Parameter Junction-to-Case Case-to-Sink Junction-to-Ambient...
