HFP13N65U - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ. ) @VGS=10V 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ = 0.4 ȍ ID = 14.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM V.

HFP13N65U n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP13N65U
Manufacturer	SemiHow
File Size	195.49 KB
Description	N-Channel MOSFET
Datasheet	HFP13N65U Datasheet

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HFP13N65U HFP13N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.) @VGS=10V 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ = 0.4 ȍ ID = 14.0 A TO-220 1 23 1.Gate 2. Drain 3.