HFP13N60U - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ. ) @VGS=10V 100% Avalanche Tested Sep 2012 BVDSS = 600 V RDS(on) typ = 0.33 ȍ ID = 14.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM V.

HFP13N60U n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP13N60U
Manufacturer	SemiHow
File Size	196.15 KB
Description	N-Channel MOSFET
Datasheet	HFP13N60U Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HFP13N10	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP13N50	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP15N06	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP17N10	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP4N65	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC

Other Datasheets by SemiHow

Part Number	Description
HFP13N65U	N-Channel MOSFET
HFP13N50S	N-Channel MOSFET
HFP13N50U	N-Channel MOSFET
HFP10N60	N-Channel MOSFET
HFP10N60S	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HFP13N60U HFP13N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.) @VGS=10V 100% Avalanche Tested Sep 2012 BVDSS = 600 V RDS(on) typ = 0.33 ȍ ID = 14.0 A TO-220 1 23 1.Gate 2. Drain 3.