Datasheet Summary
600V N-Channel MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.) @VGS=10V 100% Avalanche Tested
Sep 2012
BVDSS = 600 V RDS(on) typ = 0.33 ȍ ID = 14.0 A
TO-220
1 23
1.Gate 2. Drain 3....