HFP13N60U Datasheet N-channel MOSFET

Manufacturer: SemiHow

Overview: HFP13N60U HFP13N60U 600V N-Channel MOSFET.

Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ. ) @VGS=10V 100% Avalanche Tested Sep 2012 BVDSS = 600 V RDS(on) typ = 0.33 ȍ ID = 14.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM V.