HFS2N60 - 600V N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8 8.5 5 nC (Typ (Typ. ) ) RDS(on) typ = 4.0 Ω ID = 2.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-.

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Published: Mar 27, 2014 |