HFS2N60S - 600V N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 4.2 Ω (Typ. ) @VGS=10V 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFS2N60S 600v n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFS2N60S
Manufacturer	SemiHow
File Size	409.36 KB
Description	600V N-Channel MOSFET
Datasheet	HFS2N60S Datasheet

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HFS2N60S Nov 2007 HFS2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 4.2 Ω ID = 2.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3.