HFS2N60 - 600V N-Channel MOSFET

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SemiHow

Part number	HFS2N60
Manufacturer	SemiHow
File Size	311.31 KB
Description	600V N-Channel MOSFET
Datasheet	HFS2N60 Datasheet
Additional preview pages of the HFS2N60 datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8 8.5 5 nC (Typ (Typ. ) ) RDS(on) typ = 4.0 Ω ID = 2.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-.

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Published: Mar 27, 2014 |