HFS2N60 - 600V N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8 8.5 5 nC (Typ (Typ. ) ) RDS(on) typ = 4.0 Ω ID = 2.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-.

HFS2N60 600v n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFS2N60
Manufacturer	SemiHow
File Size	311.31 KB
Description	600V N-Channel MOSFET
Datasheet	HFS2N60 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HFS2	MOS RELAY	HF
HFS20	SOLID STATE RELAY	HF
HFS21	THREE-PHASE MOTOR CONTROL MODULE	HF
HFS22	1GBT MODULE	HF
HFS24	THREE-PHASE SOLID STATE RELAY	HF

Other Datasheets by SemiHow

Part Number	Description
HFS2N60FS	600V N-Channel MOSFET
HFS2N60S	600V N-Channel MOSFET
HFS2N60U	N-Channel MOSFET
HFS2N65	N-Channel MOSFET
HFS2N65S	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HFS2N60 July 2005 BVDSS = 600 V HFS2N60 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8 8.5 5 nC (Typ (Typ.) ) RDS(on) typ = 4.0 Ω ID = 2.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ.