HFS2N60U - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested Nov 2013 BVDSS = 600 V RDS(on) typ ȍ ID = 2 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IA.

HFS2N60U n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFS2N60U
Manufacturer	SemiHow
File Size	302.58 KB
Description	N-Channel MOSFET
Datasheet	HFS2N60U Datasheet

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HFS2N60U HFS2N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested Nov 2013 BVDSS = 600 V RDS(on) typ ȍ ID = 2 A TO-220F 12 3 1.Gate 2. Drain 3.