HFS830 Datasheet N-Channel MOSFET

Manufacturer: SemiHow

Datasheet Details

HFS830 Dec 2005 HFS830 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 4.

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.2 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.