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HFS840 Datasheet Preview

HFS840 Datasheet

N-Channel MOSFET

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Sep 2011
HFS840
500V N-Channel MOSFET
BVDSS = 500 V
RDS(on) typ ȍ
ID = 9.0 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 25 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500
9.0*
5.4*
36*
ρͤ͑͡
360
9.0
13.5
4.5
PD Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
44
0.35
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
2.86
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/ఁ͑
ఁ͑
ఁ͑
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΄ΖΡ͑ͣ͑͢͢͡




SemiHow

HFS840 Datasheet Preview

HFS840 Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 Ꮃ͑
VGS = 10 V, ID = 4.5 A͑
2.5
--
Off Characteristics
BVDSS
ԩBVDSS
/ԩTJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250 Ꮃ͑
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑
VDS = 500 V, VGS = 0 V͑
VDS = 400 V, TC = 125ఁ͑
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
--
--
--
Switching Characteristics
td(on)
Turn-On Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 250 V, ID = 9.0 A,
RG = 25 ש͑
͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 400V, ID = 9.0 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 9.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9.0 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
--
--
--
--
Typ Max Units
-- 4.5
0.7 0.85
V
ש͑
-- -- V
0.57 -- ·͠ఁ͑
-- 1 Ꮃ͑
-- 10 Ꮃ͑
-- 100 Ꮂ͑
-- -100 Ꮂ͑
1000
130
20
1300
170
26
Ꮔ͑
Ꮔ͑
Ꮔ͑
25 50
60 120
130 260
90 180
25 33
6 --
12 --
Ꭸ͑
Ꭸ͑
Ꭸ͑
Ꭸ͑
Οʹ͑
Οʹ͑
Οʹ͑
-- 9.0
-- 36
-- 1.4
335 --
2.95 --
A
V
Ꭸ͑
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=8mH, IAS=9.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΄ΖΡ͑ͣ͑͢͢͡


Part Number HFS840
Description N-Channel MOSFET
Maker SemiHow
Total Page 7 Pages
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