HRU13N10K - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 20 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 85 Pȍ (Typ. ) @VGS=10V Lower RDS(ON) : 135 Pȍ (Typ. ) @VGS=4.5V Built-in ESD Diode 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = 85 Pȍ ID = 3.5 A D-PAK I-PAK 2 1 3 HRD13N10K 1 2 3 HRU13N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol P.

HRU13N10K n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HRU13N10K
Manufacturer	SemiHow
File Size	325.55 KB
Description	N-Channel MOSFET
Datasheet	HRU13N10K Datasheet

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HRD13N10K_HRU13N10K HRD13N10K / HRU13N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 20 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 85 Pȍ (Typ.) @VGS=10V Lower RDS(ON) : 135 Pȍ (Typ.) @VGS=4.5V Built-in ESD Diode 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = 85 Pȍ ID = 3.5 A D-PAK I-PAK 2 1 3 HRD13N10K 1 2 3 HRU13N10K 1.Gate 2. Drain 3.