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LH28F160S3H-L - 16M-bit (2MB x 8/1MB x 16) Smart 3 Flash Memories

Download the LH28F160S3H-L datasheet PDF. This datasheet also covers the LH28F160S3-L variant, as both devices belong to the same 16m-bit (2mb x 8/1mb x 16) smart 3 flash memories family and are provided as variant models within a single manufacturer datasheet.

Description

The LH28F16S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through high-optimized page buffer operations.

Features

  • Smart 3 technology.
  • 2.7 V or 3.3 V VCC.
  • 2.7 V, 3.3 V or 5 V VPP.
  • High speed write performance.
  • Two 32-byte page buffers.
  • 2.7 µs/byte write transfer rate.
  • Common Flash Interface (CFI).
  • Universal & upgradable interface.
  • Scalable Command Set (SCS) 16 M-bit (2 MB x 8/1 MB x 16) Smart 3 Flash Memories (Fast Programming).
  • High performance read access time LH28F160S3-L10/S3H-L10.
  • 100 ns (3.3±0.3 V)/120.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LH28F160S3-L-Sharp.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
LH28F160S3HNS-TR Flash Memory 16M (2Mb x 8 / 1Mb x 16) Sharp Microelectronics
LH28F160S3HNS-TV Flash Memory Sharp Microelectronics
LH28F160S3HT-L10A Flash Memory 16M (2MB bb 8/1MB bb 16) Sharp Electrionic Components
LH28F160S3-L10 16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY Sharp Electrionic Components
LH28F160S3NS-L10 Flash Memory 16M (2MB bb 8/1MB bb 16) Sharp Electrionic Components

Other Datasheets by Sharp Corporation

Part Number Description
LH28F160S3-L 16M-bit (2MB x 8/1MB x 16) Smart 3 Flash Memories
LH28F160S3-L13 (LH28F160S3-L10/-13) Smart 3 Flash MEMORY
LH28F128BF (LH28FxxxBF) Page Mode Dual Work Flash Memory
LH28F128BFHED-PWTL90 Flash Memory
LH28F128BFHED-PWTLZ8 Flash Memory

Full PDF Text Transcription

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LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L DESCRIPTION The LH28F16S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through high-optimized page buffer operations. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications.
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