LH532100B Description
The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology. Reverse bend available on request.
LH532100B Key Features
- 262,144 words × 8 bit organization
- Access time: 150 ns (MAX.)
- Low-power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)
- Static operation
- Mask-programmable OE/OE and OE1/OE1/DC
- TTL patible I/O
- Three-state outputs
- Single +5 V power supply
- JEDEC standard EPROM pinout (DIP)
- A17 D0