YXD2302NE1 mosfet equivalent, 20v n-channel enhancement mode mosfet.
* VDS =20V，ID =2.5A RDS(ON)(Typ.)=61mΩ @VGS=2.5V RDS(ON)(Typ.)=46mΩ @VGS=4.5V
* High power and current handing capability
* Lead free product is acquired
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General Features
* VDS =20V，ID =2.5A RDS(ON)(Typ.)=61mΩ @VGS=2.5V RDS(ON)(Typ.)=46mΩ @VGS=4.5V
* High pow.
Schematic diagram
The YXD2302NE1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low onresistance. This device is suitable for use as a load switch or in PWM applications.
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