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Siemens Electronic Components Datasheet

BAT63-099R Datasheet

Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad)

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Silicon Schottky Diodes
• Zero bias diode array for mixer and detectors up to
GHz frequencies
• Crossover ring quad
BAT 63-099R
Type
Marking Ordering Code
BAT 63-099RSN
Q62702-A1105
Pin Configuration
1=A 2=C
Package
SOT-143
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
Forward current
IF
Total power dissipation, BAT17W TA 97°C
Ptot
Total power dissipation, BAT17-04...06W TS 92°C Ptot
Junction temperature
Tj
Operating temperature range
Top
Storage temperature
Tstg
Thermal Resistance
Junction - ambient, BAT17W
Junction - ambient, BAT17-04W...06W
Junction - soldering poin, BAT17W
Junction - soldering point, BAT17-04W...06W
RthJA
RthJA
RthJS
RthJS
Values
40
40
Unit
V
mA
mW
150 °C
- 55 ... + 150
K/W
Semiconductor Group
1
Feb-01-1996



Siemens Electronic Components Datasheet

BAT63-099R Datasheet

Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad)

No Preview Available !

BAT 63-099R
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Reverse current
VR = 40 V, TA = 25 °C
Forward voltage
IF = 2 mA
Diode capacitance
VR = 0 , f = 1 MHz
Differential forward resistance
IF = 5 mA, f = 100 MHz
V(BR)
IR
-
VF
-
CT
-
RF
-
0.85
0.35
max.
10
1
0.6
Unit
V
µA
V
pF
OHM
Semiconductor Group
2
Feb-01-1996


Part Number BAT63-099R
Description Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad)
Maker Siemens Semiconductor Group
Total Page 4 Pages
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1 BAT63-099R Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad)
Siemens Semiconductor Group





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