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Siemens Electronic Components Datasheet

BC516 Datasheet

PNP Silicon Darlington Transistor

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PNP Silicon Darlington Transistor
q High current gain
q High collector current
q Complementary type: BC 517 (NPN)
BC 516
2
3
1
Type
BC 516
Marking
Ordering Code
Q62702-C944
Pin Configuration
123
CBE
Package1)
TO-92
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 66 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - case2)
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
Unit
30 V
40
10
500 mA
800
100
200
625 mW
150 ˚C
– 65 … + 150
Rth JA
Rth JC
200
135
K/W
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
1
5.91



Siemens Electronic Components Datasheet

BC516 Datasheet

PNP Silicon Darlington Transistor

No Preview Available !

BC 516
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
Collector-base breakdown voltage
IC = 100 µA
Emitter-base breakdown voltage
IE = 10 µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
Emitter cutoff current
VEB = 4 V
DC current gain
IC = 20 mA; VCE = 2 V
Collector-emitter saturation voltage1)
IC = 100 mA; IB = 0.1 mA
Base-emitter voltage1)
IC = 10 mA; VCE = 5 V
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 30
V(BR)CB0 40
V(BR)EB0 10
ICB0
––
––
IEB0 – –
hFE 30 000 –
VCEsat
VBE – –
–V
100 nA
10 µA
100 µA
––
1V
1.4
fT
Cobo
200 –
3.5 –
MHz
pF
1) Pulse test: t 300 µs, D 2 %.
Semiconductor Group
2


Part Number BC516
Description PNP Silicon Darlington Transistor
Maker Siemens Semiconductor Group
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BC516 Datasheet PDF






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