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BC516 - PNP Darlington Transistor

General Description

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Key Features

  • This Device is Designed for.

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Datasheet Details

Part number BC516
Manufacturer onsemi
File Size 153.62 KB
Description PNP Darlington Transistor
Datasheet download datasheet BC516 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com PNP Darlington Transistor BC516 Features • This Device is Designed for Applications Reguiring Extremely High Current Gain at Currents to 1 A. • This is a Pb−Free Device ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ , TSTG Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current−Continuous Junction and Storage Junction Temperature Range −30 V −40 V −10 V −1 A −55 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.