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Siemens Electronic Components Datasheet

BFP182R Datasheet

NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)

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BFP182R pdf
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 1mA to 20mA
fT = 8GHz
F = 1.2dB at 900MHz
BFP 182R
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 182R RGs
Q62702-F1601
1=E 2=C 3=E 4=B
Package
SOT-143R
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 69 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
35
4
250
150
- 65 ... + 150
- 65 ... + 150
325
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Jan-21-1997



Siemens Electronic Components Datasheet

BFP182R Datasheet

NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)

No Preview Available !

BFP182R pdf
BFP 182R
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 10 mA, VCE = 8 V
V(BR)CEO
12
ICES
-
ICBO
-
IEBO
-
hFE
50
-
-
-
-
100
max.
-
100
100
1
200
Unit
V
µA
nA
µA
-
Semiconductor Group
2
Jan-21-1997


Part Number BFP182R
Description NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
Maker Siemens Semiconductor Group
Total Page 7 Pages
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