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BSS100 Datasheet

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

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BSS 100
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Type
BSS 100
Type
BSS 100
BSS 100
BSS 100
VDS
100 V
ID
0.22 A
Ordering Code
Q62702-S499
Q62702-S007
Q62702-S206
Pin 1
S
Pin 2
G
RDS(on)
6
Package
TO-92
Tape and Reel Information
E6288
E6296
E6325
Marking
SS 100
Pin 3
D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 k
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 33 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Semiconductor Group
1
Values
100
100
± 14
± 20
0.22
0.9
0.63
Unit
V
A
W
12/05/1997



Siemens Electronic Components Datasheet

BSS100 Datasheet

SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)

No Preview Available !

BSS 100
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJA
Values
Unit
-55 ... + 150 °C
-55 ... + 150
200
K/W
E
55 / 150 / 56
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 100 V, VGS = 0 V, Tj = 25 °C
VDS = 100 V, VGS = 0 V, Tj = 125 °C
VDS = 20 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.22 A
VGS = 4.5 V, ID = 0.22 A
V(BR)DSS
100
VGS(th)
0.8
IDSS
-
-
-
IGSS
-
RDS(on)
-
-
-
1.5
0.1
2
1
1
3.5
5
-
2
1
60
10
10
6
10
V
µA
nA
nA
Semiconductor Group
2
12/05/1997


Part Number BSS100
Description SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Maker Siemens Semiconductor Group
Total Page 7 Pages
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