BSS110 Overview
Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.
Key Features
- BSS84: -0.13A, -50V
- RDS(ON) = 10Ω @ VGS = -5V
- BSS110: -0.17A, -50V
- RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch
- High density cell design for low RDS(ON)
- High saturation current
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