| Part number | BSS110 |
|---|---|
| Datasheet | BSS110_FairchildSemiconductor.pdf |
| File Size | 285.09 KB |
| Manufacturer | Fairchild (now onsemi) |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
|
|
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BSS110 | SIPMOS Small-Signal Transistor | Siemens Semiconductor |
 |
BSS110 | P-channel enhancement mode vertical D-MOS transistor | NXP |
See all Fairchild (now onsemi) datasheets
| Part Number | Description |
|---|---|
| BSS100 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| BSS123 | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| BSS123W | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| BSS138 | N-Channel MOSFET |
| BSS138K | N-Channel MOSFET |
| BSS138W | N-Channel MOSFET |
| BSS63 | PNP General Purpose Amplifier |
| BSS64 | NPN General Purpose Amplifier |
| BSS79C | NPN General Purpose Amplifier |
| BSS84 | P-Channel MOSFET |
