BSS110 transistor equivalent, p-channel enhancement mode field effect transistor.
BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell desig.
requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This product is particularly suited to low voltage.
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