BSS110 - P-Channel Enhancement Mode Field Effect Transistor

Fairchild Semiconductor

Datasheet Details

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology..

BSS84: -0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5V. BSS110: -0.17A, -50V. RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ____________________________________________________________________________________________ S G D Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted BSS84 BSS110 Units VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage (RGS < 20.

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