BSS100 transistor equivalent, n-channel logic level enhancement mode field effect transistor.
BSS100: 0.22A, 100V. RDS(ON) = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V High density cell design for extremely low RDS(ON). Voltage controlled small .
such as small servo motor controls, power MOSFET gate drivers, and other switching applications.
Features
BSS100: 0.22.
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