• Part: BUZ11
  • Description: Power Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 120.50 KB
Download BUZ11 Datasheet PDF
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Datasheet Summary

BUZ 11 Not for new design SIPMOS ® Power Transistor - N channel - Enhancement mode - Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 11 50 V 30 A RDS(on) 0.04 Ω Package TO-220 AB Ordering Code C67078-S1301-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 30 Unit A ID IDpuls TC = 29 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 30 1.9 mJ ID = 30 A, VDD = 25 V, RGS = 25 Ω L = 15.6 µH, Tj = 25 °C Gate source voltage Power dissipation 14 VGS Ptot ± 20 75 TC = 25 °C Operating temperature Storage temperature Thermal resistance,...