PC100-222-620 Datasheet (Siemens Semiconductor Group) - 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module

PC100-222-620 - 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module

Module Height 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ L-DIM-168-29 100 Mhz 2M x 64 1 bank SDRAM module L-DIM-168-29 100 MHz 2M x 72 1 bank SDRAM module L-DIM-168-29 100 Mhz 4M x 64 2 bank SDRAM module L-DIM-168-29 100 Mhz 4M x 72 2 bank SDRAM module L-DIM-168-29 100

3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 * 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL’ s Rev.
1.0 modu

PC100-222-620 Features

* 10 SDRAM-Modules AC Characteristics 3)4) TA = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3

PC100-222-620 Datasheet - Siemens Semiconductor Group

PC100-222-620 - 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module

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